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hanbit h m f 25664f 4 v p url: www.hbe.co.kr h anbit electronic s co., ltd. rev.02(august,2002) 1 general description the h m f 25664f4vp is a high - speed flash read only memory (from) module containing 262,144 words or ganized in an x 64 bit configuration. the module consists of four 256k x 16 from mounted on a 120 - pin, smm connector fr4 - printed circuit board. commands are written to the command register using standard microprocessor write timings. register contents serve as input to an internal state - machine, which controls the erase and programming circuitry. write cycles also internally latch addresse s and data needed for the programming and erase operations. reading data out of the device is similar to reading from 12.0v flash or eprom devices. output enable (/oe) and write enable (/we) can set the memory input and output. the host system can detect a program or erase operation is complete by observing the ready pin, or reading the dq7(data # polling) and dq6(toggle) status bits. when from module is disable condition the module is becoming power standby mode, system designer can get low - power design. all module components may be powered from a single + 3.0 v dc power supply and all inputs and outputs are lv ttl - compatible features w access time : 50 , 55, 70, 90 and 120ns w high - density 2 mbyte design w high - reliability, low - power design w single + 3v 0.3v power supply w easy memory expansion w hardware reset pin(res et#) w fr4 - pcb design w 12 0 - pin designed by 60 - pin fine pitch connector p1,p2 w minimum 1 ,0 00,000 write cycle guarantee per sector w 20 - year data retention at 125 o c w flexible sector architecture w embedded algorithms w erase suspend / erase resume opti ons marking w timing 50 n s access - 5 0 55 n s access - 55 70 n s access - 70 90 n s access - 90 120 n s access - 120 w packages 120 - pin smm f p1 p2 pin symb ol pin symb ol pin symb ol pin symbol 1 vcc 31 vss 1 vcc 31 vss 2 dq32 32 dq0 2 dq16 32 dq48 3 dq33 33 dq1 3 dq17 33 d q49 4 dq34 34 dq2 4 dq18 34 dq50 5 dq35 35 dq3 5 dq19 35 dq51 6 dq36 36 dq4 6 dq20 36 dq52 7 dq37 37 dq5 7 dq21 37 dq53 8 dq38 38 dq6 8 dq22 38 dq54 9 dq39 39 dq7 9 dq23 39 dq55 10 vcc 40 vss 10 vcc 40 vss 11 dq40 41 dq8 11 dq24 41 dq56 12 dq41 42 dq9 12 dq25 42 dq57 13 dq42 43 dq10 13 dq26 43 dq58 14 dq43 44 dq11 14 dq27 44 dq59 15 dq44 45 dq12 15 dq28 45 dq60 16 dq45 46 dq13 16 dq29 46 dq61 17 dq46 47 dq14 17 dq30 47 dq62 18 dq47 48 dq15 18 dq31 48 dq63 19 vcc 49 vss 19 vcc 49 vss 20 a1 5 0 a10 20 nc 50 nc 21 a2 51 a11 21 a0 51 /bank0 22 a3 52 a12 22 a16 52 vss 23 a4 53 a13 23 /we1 53 /byte 24 a5 54 a14 24 /we2 54 /we3 25 vcc 55 vss 25 vcc 55 vss 26 a6 56 a15 26 /oe 56 nc 27 a7 57 a17 27 /res et 57 nc 28 a8 58 nc 28 /we0 58 nc 29 a9 59 nc 29 /ry _ b y 59 nc 30 vcc 60 vss 30 vcc 60 vss flash - rom module 2 mbyte ( 256k x 64 - bit) ,120pin smm,3.3v part no. hmf 25664f4vp p in assignment
hanbit h m f 25664f 4 v p url: www.hbe.co.kr h anbit electronic s co., ltd. rev.02(august,2002) 2 f u nctional block diagr am dq0 C dq 63 64 a ( 0 - 1 7) /we / oe dq ( 0 - 15) / ce u 2 ry - by / reset a ( 0 - 17) / we /oe dq (16 - 31) /ce u 3 ry - by / reset a ( 0 - 17) / we /oe dq (32 - 47) / ce u 1 ry - by / reset a ( 0 - 17) /we / oe dq (48 - 63) / ce u 4 ry - by / reset / we0 / we 1 / we 2 / we 3 / oe / bank0 ry_/by /reset 18 a 0 C a 17 / byte / byte / byte / byte /byte
hanbit h m f 25664f 4 v p url: www.hbe.co.kr h anbit electronic s co., ltd. rev.02(august,2002) 3 truth table dq 8 - dq15 mode /oe /ce /we /reset dq 0 - dq7 /byte=v ih standby x vcc 0.3 x vcc 0.3 high - z high - z not selected h l h h high - z high - z read l l h h dout dout write or erase h l l h d in d in note: x means don t care absolute maximum ratings parameter symbol rating voltage with respect to ground all other pins v in,out - 0 . 5 v to vcc+0.5 v voltage with respect to ground vcc v cc - 0 . 5 v to + 4 .0v storage temperature t stg - 65 o c to +1 50 o c operating temperature t a - 55 o c to +125 o c w stresses greater than those listed under " absolute maximum ratings" may cause permanent damage to the device. this is a stress rating only and functional oper ation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. exposure to absolute maximum rating conditions for extended periods may affect reliability. recommended dc o perating conditions parameter symbol min typ . max vcc for regulated voltages range v cc 3.0 v 3.6 v vcc for full voltages range vcc 2.7v 3.6v ground v ss 0 0 0 dc and operating cha racteristics (0 o c t a 70 o c ; vcc = 5v 0.5v ) parameter test condi tions symbol min max units input l oad current v in =v ss to vcc vcc = vcc max i l1 1.0 m a output leakage current vcc=vcc max, v out = v ss to vcc i l0 1.0 m a i oh = - 2. 0 ma, vcc = vcc min v oh 1 0.85v cc output high voltage i oh = - 100 u a, vcc = vcc min v o h 2 v cc C 0.4 v output low voltage i ol = 4.0m a, vcc =vcc min v ol 0.45 v vcc active current for read(1) /ce = v il , /oe=v ih , i cc1 7 12 ma vcc active current for program or erase (2,3) /ce = v il , /oe=v ih i cc2 15 30 ma vcc standby current (3) /ce,/reset= v cc 0.3v i cc3 0.2 5 ma low vcc lock - out voltage v lko 2.3 2.5 v notes: 1. the i cc current listed is typically less than 2ma/mhz, with /oe at v ih . typical v cc is 3.0v. 2. i cc active while embedded algorithm (program or erase) is in progress 3. maximum icc current specifications are tested with vcc=vcc max
hanbit h m f 25664f 4 v p url: www.hbe.co.kr h anbit electronic s co., ltd. rev.02(august,2002) 4 erase and programmin g performance limits parameter min. typ. max. unit comments sector erase time - 0.7 15 sec excludes 00h programming prior to erasur e byte programming time - 9 300 m s excludes system - level overhead chip programming time - 11 sec excludes system - level overhead capacitance parameter symbol parameter descrip tion test setup typ. max unit c in input cap acitance v in = 0 6 7.5 pf c out output capacitance v out = 0 8.5 12 pf c in2 control pin capacitance v in = 0 7.5 9 pf notes : test conditions t a = 25 o c, f=1.0 mhz. ac characteristics u read only operations characteristics parameter symbols s peed options jedec standard descript ion test setup 50r 55r 70 90 12 0 unit t avav t rc read cycle time min 50 55 70 90 120 ns t avqv t acc address to output delay /ce = v il /oe = v il max 50 55 70 90 120 ns t elqv t ce chip enable to output delay /oe = v il ma x 50 55 70 90 120 ns t glqv t oe chip enable to output delay max 30 30 30 35 50 ns t ehqz t df chip enable to output high - z max 25 25 25 3 0 30 ns t ghqz t df output enable to output high - z max 25 25 25 30 30 ns t axqx t qh output hold time from addresse s, /ce or /oe, whichever occurs first min 0 0 0 0 0 ns notes : test conditions output load : 1ttl gate output load capacitance - 50r,55r,70 - 3 0 pf - 90,120 - 30pf input rise and fall times : 5 ns input pulse levels : 0.0v - 3.0v timing measurement reference level - input : 1.5v - output : 1.5v
hanbit h m f 25664f 4 v p url: www.hbe.co.kr h anbit electronic s co., ltd. rev.02(august,2002) 5 u erase/program operations parameter symbols s peed options unit jedec standard description 50r 55r 70 9 0 12 0 t avav t wc write cycle time min 50 55 70 90 120 ns t avwl t as address setup time min 0 ns t wlax t ah address hold time min 45 45 45 45 50 ns t dvwh t ds data setup time min 45 45 45 45 50 ns t whdx t dh data hold time min 0 ns t oes output enab le setup time min 0 ns t ghwl t ghwl read recover time before w rite min 0 ns t elwl t cs /ce setup time min 0 ns t wheh t ch /ce hold time min 0 ns t wlwh t wp write pulse width min 35 35 35 35 50 ns t whwl t wph write pulse width high min 3 0 ns t whwh1 t w hwh1 byte programming operation typ 9 m s t whwh2 t whwh2 sector erase operation (note1) typ 0.7 sec t v cs vcc set up time min 50 m s notes : 1. this does not include the preprogramming time 2. this timing is only for sector protect oper ations 3.3 v device under test 2 .7k w diodes = in3064 or equivalent 6.2k w in3064 or equivalent c l note : c l = 100pf including jig capacitance
hanbit h m f 25664f 4 v p url: www.hbe.co.kr h anbit electronic s co., ltd. rev.02(august,2002) 6 u erase/program operations alternate /ce controlled writes parameter symbols speed option unit jedec standard description 50r 55r 70 90 120 t avav t wc write cycle time min 50 55 70 90 120 ns t avel t as address setup time min 0 ns t elax t ah address hold time min 4 5 45 45 45 50 ns t dveh t ds data setup time min 3 5 35 35 45 50 ns t ehdx t dh data hold time min 0 ns t oes output enable setup time min 0 ns t ghel t ghel read recover time before write min 0 ns t wlel t ws /we setup time mi n 0 ns t ehwh t wh /we hold time min 0 ns t eleh t cp /ce pulse width min 3 5 35 3 5 35 50 ns t ehel t cph /ce pulse width high min 30 ns t whwh1 t whwh1 byte programming operation typ 9 m s t whwh2 t whwh2 sector erase operation (note) typ 0.7 sec notes : this does not include the preprogramming time.
hanbit h m f 25664f 4 v p url: www.hbe.co.kr h anbit electronic s co., ltd. rev.02(august,2002) 7 u read operations timing u reset timing
hanbit h m f 25664f 4 v p url: www.hbe.co.kr h anbit electronic s co., ltd. rev.02(august,2002) 8 u program operations timing u chip/sector erase operation timings
hanbit h m f 25664f 4 v p url: www.hbe.co.kr h anbit electronic s co., ltd. rev.02(august,2002) 9 u data# polling times(during embedded algorithms) u toggle# bit timings (during embedded algorithms)
hanbit h m f 25664f 4 v p url: www.hbe.co.kr h anbit electronic s co., ltd. rev.02(august,2002) 10 u sector protect unprotect timeing diagram u alternate ce# controlled write operating timings
hanbit h m f 25664f 4 v p url: www.hbe.co.kr h anbit electronic s co., ltd. rev.02(august,2002) 11 package dimensions front side rear side
hanbit h m f 25664f 4 v p url: www.hbe.co.kr h anbit electronic s co., ltd. rev.02(august,2002) 12 o r dering information part numbe r density org. package component number vcc speed hmf25664f4vp - 50 2mbyte x 64 120 pin - smm 4ea 3.3v 50ns hmf25664f4vp - 55 2mbyte x 64 120 pin - smm 4ea 3.3v 55ns hmf25664f4vp - 70 2mbyte x 64 120 pin - smm 4ea 3.3v 70ns hmf25664f4vp - 90 2mbyte x 64 120 pin - smm 4ea 3.3v 90ns hmf25664f4vp - 120 2mbyte x 64 120 pin - smm 4ea 3.3v 120ns p : pull up of all signal (data line, address line, controll signal line)

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